FDP61N20
Manufacturer:
On Semiconductor
Mfr.Part #:
FDP61N20
Datasheet:
Description:
MOSFETs TO-220AB-3 Through Hole N-Channel number of channels:1 417 W 200 V Continuous Drain Current (ID):61 A 75 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 200 V |
| Length | 10.67 mm |
| Width | 4.83 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 41 MΩ |
| Height | 9.4 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Voltage | 200 V |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current | 61 A |
| Current Rating | 61 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 417 W |
| Power Dissipation | 417 W |
| Threshold Voltage | 5 V |
| Number of Channels | 1 |
| Input capacitance | 3.38 nF |
| Continuous Drain Current (ID) | 61 A |
| Rds On Max | 41 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 40 ns |
| Turn-Off Delay Time | 125 ns |
| Element Configuration | Single |
| Fall Time | 170 ns |
| Rise Time | 215 ns |
| Gate Charge | 75 nC |
| Drain to Source Resistance | 41 mΩ |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 3 V |
Stock: 6
Distributors
pcbx
pcbxUnit Price$3.19939
Ext.Price$3.19939
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $3.19939 | $3.19939 |
| 10 | $2.80694 | $28.06940 |
| 25 | $2.68782 | $67.19550 |
| 50 | $2.57376 | $128.68800 |
| 100 | $2.36205 | $236.20500 |
| 300 | $2.30649 | $691.94700 |
| 500 | $2.25224 | $1126.12000 |